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| MITSUBISHI FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ID(rms) .......................................................... 100A VDSS.............................................................100V Insulated Type 6-elements in a pack NTC Thermistor inside UL Recognized Yellow Card No.E80276 File No.E80271 APPLICATION AC motor control of forklift (battery power source), UPS OUTLINE DRAWING & CIRCUIT DIAGRAM 110 97 70.9 32 10 30 7 7 30 Dimensions in mm 6.5 15.2 16.5 10 16 36 16 36 35 26 (6) (6) 6.5 (14.5) 22.57 4 11.5 (17.5) 22.75 (15.8) 3 6.5 7 14 9.2 5-6.5 38 3 (8.7) 3.96 9.1 1 13 12 6 (14.5) (6) U V W 14 20 16.5 A 32 14 20 32 B 14 20 14 (SCREWING DEPTH) 25 Tc measured point Housing Type of A and B (Tyco Electronics P/N:) A: 917353-1 B: 179838-1 CIRCUIT DIAGRAM P (7)GUP (1)SUP U (10)GUN (4)SUN N (8)GVP (2)SVP V (11)GVN (5)SVN (9)GWP (3)SWP W (12)GWN (6)SWN (14) (13) (1)SUP NTC (2)SVP (8)GVP 4 (3)SWP (4)SUN (5)SVN LABEL 75 67 80 90 N P (6)SWN (7)GUP (9)GWP (10)GUN (11)GVN (12)GWN A B (13)TH1 (14)TH2 Feb. 2009 MITSUBISHI FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE ABSOLUTE MAXIMUM RATINGS (Tch = 25C unless otherwise specified.) Symbol VDSS VGSS ID(rms) IDM IDA IS(rms)*1 ISM*1 PD*4 PD*4 Tch Tstg Viso -- -- Item Drain-source voltage Gate-source voltage Drain current Avalanche current Source current Maximum power dissipation Channel temperature Storage temperature Isolation voltage Mounting torque Weight Conditions G-S Short D-S Short TC' = 137C*3 Pulse*2 L = 10H Pulse*2 Pulse*2 TC = 25C TC' = 25C*3 Ratings 100 20 100 200 100 100 200 410 560 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 600 Unit V V Arms A A Arms A W W C C Vrms N*m N*m g Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS (Tch = 25C unless otherwise specified.) Symbol IDSS VGS(th) IGSS rDS(ON) (chip) VDS(ON) (chip) R(lead) Ciss Coss Crss QG td(on) tr td(off) tf trr*1 Qrr*1 VSD*1 Rth(ch-c) Rth(ch-c') Rth(c-f) Rth(c'-f') Item Drain cutoff current Gate-source threshold voltage Gate leakage current Static drain-source On-state resistance Static drain-source On-state voltage Lead resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Source-drain voltage Thermal resistance Contact thermal resistance Conditions VDS = VDSS, VGS = 0V ID = 10mA, VDS = 10V VGS = VGSS, VDS = 0V ID = 100A VGS = 15V ID = 100A VGS = 15V ID = 100A terminal-chip VDS = 10V VGS = 0V VDD = 48V, ID = 100A, VGS = 15V VDD = 48V, ID = 100A, VGS 15V RG = 13, Inductive load IS = 100A Min. -- 4.7 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ. -- 6 -- 2.4 4.1 0.24 0.41 1.2 1.68 -- -- -- 760 -- -- -- -- -- 3.6 -- -- -- 0.1 0.09 Max. 1 7.3 1.5 3.3 -- 0.33 -- -- -- 50 7 4 -- 400 300 450 300 250 -- 1.3 0.30 0.22 -- -- Unit mA V A m V m Tch = 25C Tch = 125C Tch = 25C Tch = 125C Tch = 25C Tch = 125C nF nC ns IS = 100A, VGS = 0V MOSFET part (1/6 module)*7 MOSFET part (1/6 module)*3 Case to heat sink, Thermal grease Applied*8 (1/6 module) Case to heat sink, Thermal grease Applied*3, *8 (1/6 module) ns C V K/W NTC THERMISTOR PART Symbol RTh*6 B*6 Parameter Resistance B Constant 25C*5 Conditions TTh = Resistance at TTh = 25C, 50C*5 Min. -- -- Limits Typ. 100 4000 Max. -- -- Unit k K *1: It is characteristics of the anti-parallel, source-drain free-wheel diode (FWDi). *2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating. *3: Case Temperature (Tc') measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips. *4: Pulse width and repetition rate should be such as to cause negligible temperature rise. *5: TTh is thermistor temperature. 1 *6: B = In( R25 )/( 1 ) R50 T25 T50 R25: resistance at absolute temperature T25 [K]: T25 = 25 [C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]: T50 = 50 [C]+273.15 = 323.15 [K] *7: Case Temperature (Tc) measured point is shown in page OUTLINE DRAWING. *8: Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. Feb. 2009 2 MITSUBISHI FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) Chip 200 VGS = 20V 15V 200 10V 12V DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) Chip VDS = 10V DRAIN CURRENT ID (A) 160 150 Tch = 125C 100 Tch = 25C 120 9V 80 40 Tch = 25C 0 0 0.2 0.4 0.6 0.8 1.0 50 0 5 7 9 11 13 15 DRAIN-SOURCE VOLTAGE VDS (V) GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE ON-STATE VOLTAGE VS. TEMPERATURE (TYPICAL) Chip ID = 100A 5 VGS = 12V 4 VGS = 15V 3 2 1 0 GATE THRESHOLD VOLTAGE VGS(th) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS(ON) (m) GATE THRESHOLD VOLTAGE VS. TEMPERATURE (TYPICAL) 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 VDS = 10V ID = 10mA 6 0 20 40 60 80 100 120 140 160 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE ON-STATE VOLTAGE VS. GATE BIAS (TYPICAL) Chip 2.0 DRAIN-SOURCE ON-STATE VOLTAGE VDS(ON) (V) 102 7 5 CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) Tch = 25C 1.6 CAPACITANCE (nF) 3 2 1.2 Ciss 101 7 5 3 2 0.8 ID = 200A 0.4 ID = 50A 0 4 8 12 16 20 ID = 100A VGS = 0V 100 -1 10 2 3 5 7 100 Coss Crss 2 3 5 7 101 2 3 5 7 102 0 GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE VOLTAGE VDS (V) Feb. 2009 3 MITSUBISHI FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-SOURCE VOLTAGE VGS (V) ID = 100A 103 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) Chip VGS = 0V 16 VDD = 24V 12 VDD = 48V SOURCE CURRENT IS (A) 7 5 3 2 Tch = 125C Tch = 25C 102 7 5 3 2 8 4 0 0 200 400 600 800 1000 1200 101 0.5 0.6 0.7 0.8 0.9 1.0 GATE CHARGE QG (nC) SOURCE-DRAIN VOLTAGE VSD (V) 103 7 5 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) td(on) tr tf Conditions: VDD = 48V VGS = 15V ID = 100A Tch = 125C Inductive load 0 20 40 60 80 100 120 140 SWITCHING TIME (ns) 3 2 td(on) tr SWITCHING TIME (ns) td(off) 103 7 5 3 2 102 7 5 3 2 tf Conditions: VDD = 48V VGS = 15V RG = 13 Tch = 125C Inductive load 2 3 5 7 102 2 3 5 7 103 102 7 5 3 2 101 1 10 101 DRAIN CURRENT ID (A) GATE RESISTANCE RG () 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Esw(on) Esw(off) Conditions: VDD = 48V VGS = 15V ID = 100A Tch = 125C Inductive load SWITCHING LOSS (mJ/pulse) 3 2 SWITCHING LOSS (mJ/pulse) 7 5 7 5 3 2 100 7 5 3 2 Esw(off) Esw(on) Err Conditions: VDD = 48V VGS = 15V RG = 13 Tch = 125C Inductive load 2 3 5 7 103 100 7 5 3 2 10-1 7 5 3 2 10-1 Err 7 5 3 2 10-2 1 10 2 3 5 7 102 10-2 0 20 40 60 80 100 120 140 DRAIN CURRENT ID (A) GATE RESISTANCE RG () Feb. 2009 4 MITSUBISHI FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 3 2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(ch-c) 7 5 7 5 3 2 trr Irr Conditions: VDD = 48V VGS = 15V RG = 13 Tch = 25C Inductive load 2 3 5 7 102 2 3 5 7 103 Irr (A), trr (ns) 102 7 5 3 2 10-1 7 5 3 2 10-1 7 5 3 2 101 7 5 3 2 10-2 7 5 3 Single pulse 2 Tch = 25C Per unit base = Rth(ch-c) = 0.30K/W 10-2 7 5 3 2 100 1 10 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 SOURCE CURRENT IS (A) TIME (s) CHIP LAYOUT (110) (97) 90.6 57.6 47.2 24.6 51.8 48.4 29.6 7 1 (67) (80) (90) 12 6 U 25.6 58.6 91.6 N 13 14 P LABEL SIDE V W Feb. 2009 5 |
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